Product Features
The power device of the whole machine adopts a silicon carbide MOSFET, which makes the system become smaller and more efficient compared with the power device made of silicon material. SiC MOSFET has the characteristics of high switching speed, low parasitic capacitance, high blocking voltage, low on-resistance and positive temperature coefficient, which is easy to connect in parallel and simple to drive.
The magnetic device of the whole device adopts a high permeability metal magnetic powder core inductor, and its basic characteristics are: high Bs (1.5T); it is not easy to generate saturation when making the rectifying filter choke on the DC output terminal under large current conditions, with good constant permeability; simple manufacturing process, high temperature sintering not required, accurate size, energy-saving and consumption-reducing.
Maximum system efficiency >99.5%
Constant current on low voltage side
Constant power on low voltage side
Constant voltage on high voltage side
Constant current on high voltage side, etc.
