Mainstream front and back electrode design, strong adaptability of the module side, compatible with half-cell modules
In-depth optimization of the thermal oxidation process and PE coating process for the front to ensure excellent PID resistance
Designed with a solid front busbar and long back electrode, mainstream wafers, processed for low wafer thickness loss and low thermal stress, giving the product exceptional mechanical load performance
Mainstream light-induced degradation (LID) equipment to ensure high resistance to LID
Fully automated appearance, EL, and electrical performance testing equipment to ensure stable quality
